Tunable Electronic Properties in van der Waals Heterostructure Germanene/Germanane
نویسندگان
چکیده
It is challenging to epitaxially grow germanene on conventional semiconductor substrate. Based on first-principles calculations, we investigate the structural and electronic properties of germanene/germanane heterostructure (HTS). The results indicate that the Dirac cone with nearly linear band dispersion of germanene maintains in the band gap of substrate. Remarkably, the band gap opened in these HTSs can be effectively modulated by the external electric field and strain, along with a very low effective masses and high carrier mobilities. These results provide a route to design high-performance FET operating at room temperature in nanodevices.
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